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| TPC6201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6201 HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 80 m (typ.) High forward transfer admittance: |Yfs| = 3.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR (Note 5) EAR Tch Tstg Rating 30 30 20 2.5 10 0.9 W 0.76 0.4 W 0.31 1.0 1.25 0.16 150 -55 to 150 mJ A mJ C C 1 2 3 Unit V V V A Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-3T1B Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 Thermal Characteristics Marking (Note 6) Characteristics Symbol Max 139 C/W 165 310 C/W 400 Unit Single-device operation Rth (ch-a) (2) Thermal Resistance (Note 3a) (channel-to-ambient) (t = 5 s) (Note 2a) Single device value at R (2) dual operation (Note 3b) th (ch-a) Single-device operation Rth (ch-a) (2) Thermal Resistance (Note 3a) (channel-to-ambient) (t = 5 s) (Note 2b) Single device value at Rth (ch-a) (2) dual operation (Note 3b) S4A Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. 1 2002-01-17 TPC6201 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 4.7 W ID = 1.3 A VOUT RL = 11.5 W VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 1.3 A VGS = 10 V, ID = 1.3 A VDS = 10 V, ID = 1.3 A Min 3/4 3/4 30 15 1.3 3/4 3/4 1.25 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 128 80 3.8 170 25 40 2.4 8 2 11 4.7 3.4 1.3 Max 10 10 3/4 3/4 2.5 145 95 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA mA V V mW S Duty < 1%, tw = 10 ms = VDD ~ 15 V - VDD ~ 24 V, VGS = 10 V, ID = 2.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Pulse drain reverse current Forward voltage (diode) (Note 1) Symbol IDRP VDSF Test Condition 3/4 IDR = 2.5 A, VGS = 0 V Min 3/4 3/4 Typ. 3/4 3/4 Max 10 -1.2 Unit A V Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 25.4 0.8 Unit: (mm) FR-4 25.4 25.4 0.8 Unit: (mm) (a) (b) Note 3: (a) Single-device operation; values of PD (1) and Rth (ch-a) (1) for a single device during single-device operation (b) Dual operation; values of PD (2) and Rth (ch-a) (2) for a single device during dual operation Note 4: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 W, IAR = 1.25 A Note 5: Repetitive rating; pulse width limited by maximum channel temperature Note 6: Black round marking "*" locates on the left lower side of parts number marking "S4A" indicates terminal No.1. 2 2002-01-17 TPC6201 ID - VDS 5 Common source Ta = 25C Pulse test 8 10 6 10 10 8 8 6 ID - VDS 5 Common source Ta = 25C Pulse test 4.5 4 (A) (A) 4.5 ID 3 3.5 2 3 1 VGS = 2.5 V 0 0 0.1 0.2 0.3 0.4 0.5 ID 6 4 Drain current Drain current 4 3.5 2 3 VGS = 2.5 V 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 5 Common source VDS = 10 V Pulse test 1.0 VDS - VGS Common source Ta = 25C Pulse test (V) VDS Drain-source voltage 4 0.8 ID (A) 3 0.6 Drain current 2 Ta = -55C 0.4 ID = 2.5 A 0.2 0.6 A 1.2 A 1 100C 25C 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VDS (V) Gate-source voltage VGS (V) |Yfs| - ID 10 1000 Common source VDS = 10 V Pulse test 5 Common source Ta = 25C Pulse test RDS (ON) - ID iYfsi (S) Drain-source on resistance RDS (ON) (mW) Ta = -55C 25C 100C 300 VGS = 4.5 V Forward transfer admittance 3 100 10 V 30 1 0.1 0.3 0.5 1 3 5 10 10 0.1 0.3 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 3 2002-01-17 TPC6201 RDS (ON) - Ta 250 Common source 200 ID = 2.5 A, 1.2 A, 0.6 A 150 VGS = 4.5 V 100 ID = 2.5 A, 1.2 A, 0.6 A 50 VGS = 10 V 0 -80 Pulse test 100 Common source Ta = 25C Pulse test IDR - VDS Drain-source on resistance RDS (ON) (mW) Drain reverse current IDR (A) 30 10 10 V 3 1 5V 1V 3V VGS = 0 V 0.3 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 2.8 Vth - Ta Common source VDS = 10 V ID = 1 mA Pulse test 300 Gate threshold voltage Vth (V) 2.4 (pF) Ciss 100 Capacitance C 2 30 Coss Crss 1.6 10 Common source 3 VGS = 0 V f = 1 MHz Ta = 25C 1 0.1 0.3 1 1.2 3 10 30 100 0.8 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 1 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Dual operation (per device) (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Dual operation (per device) (Note 3b) t=5s 40 Dynamic input/output characteristics 12 V Common source ID = 2.5 A Ta = 25C Pulse test 16 (W) (V) 0.8 6V 30 VDS = 24 V PD VDS Drain power dissipation Drain-source voltage 20 12 V 10 6V VGS 8 0.4 (3) (4) 4 0.2 0 0 25 50 75 100 125 150 175 200 0 0 2 4 6 8 0 10 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2002-01-17 Gate-source voltage 0.6 VDD = 24 V VGS 12 (V) (2) TPC6201 rth - tw 1000 (4) (3) (2) (1) Transient thermal impedance rth (C/W) 300 100 30 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single device value at dual operation (Note 3b) 0.01 0.1 1 10 100 1000 10 3 Single pulse 1 0.001 Pulse tw (S) Safe operating area 100 30 10 3 1 0.3 0.1 0.03 0.01 0.003 *: Curves must be derated linearly with increase in temperature 0.03 0.1 0.3 1 3 Single device value at dual operation (Note 3b) ID max (pulse)* 1 ms* Drain current ID (A) VDSS max 10 30 100 0.001 0.01 Drain-source voltage VDS (V) 5 2002-01-17 TPC6201 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-17 |
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